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Ion beam deposition of Mn-Ir spin valves

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9 Author(s)

Half-biased spin valves have been prepared by ion beam deposition. The magnetoresistance (MR) signal reaches 7.7% and the exchange field is 350 Oe with a coupling field of 15 Oe and a coercivity of the free layer equal to 4 Oe. The (111) texture induced by a very thin Ta buffer layer (thickness <10 Å) has a strong effect in increasing the MR signal and coupling field, while decreasing the exchange field and coercivity. The blocking temperature of the MnIr-biased spin valves is 250°C and a thermal stability study shows that the exchange field is constant up to 300°C, under consecutive 5-h anneals at each temperature. After these anneals, the MR signal is still equal to 5%. These films show better thermal stability than equivalent samples prepared by sputtering

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Magnetics, IEEE Transactions on  (Volume:35 ,  Issue: 5 )