By Topic

Dependence of plasma damage on density and Te in a decoupled plasma source metal etcher

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)

Plasma induced damage due to metal etch is a well established and well studied problem. Work by several groups has shown that the primary mechanism is electron shading, and that current injection through the gate oxide occurs during the period when open areas in the pattern have cleared but dense areas have not, leading to latent antenna effects (Krishnan et al., 1995; Kinoshita et al., 1997; Krishnan et al., 1997). It has also been shown that damage is generally more severe in high power processes, correlating generally with higher plasma density (Colonell et al., 1997; Tabara, 1996). This observation is easily explained by more available current, if the plasma can be viewed as a current limited source. Plasma damage in general is expected to become more severe with increasing electron temperature, but this effect is less well explored, due partly to the difficulty of measuring Te . In this paper, we examine the dependence of plasma damage on pressure during the overetch. Measurements of plasma density and Te show that reduced damage at higher pressures correlates with a drop in both density and Te; applying a simple circuit model to the data suggests that decreased Te is the primary driver

Published in:

Plasma Process-Induced Damage, 1999 4th International Symposium on

Date of Conference: