By Topic

Correlation of ellipsometric volume fraction to polysilicon grain size from transmission electron microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Carbone, T.A. ; Fairchild Semicond., South Portland, ME, USA ; Plourde, P. ; Karagiannis, E.

The actual grain size of polysilicon films as obtained by TEM is correlated to an ellipsometric method using volume fraction and effective medium approximation modeling. The deposition temperature of polysilicon thin films was evaluated using volume fraction. It was determined that as the temperature decreased, and the film approaches an amorphous layer, the volume fraction increased. The volume fraction method is also shown to be useful for post implantation and anneal monitoring of polysilicon morphology. The growth of polysilicon films following anneal and also doping and anneal can be monitored very accurately with the volume fraction measurement

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Date of Conference:

1999