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Development of copper etch technology for advanced copper interconnects

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8 Author(s)
P. Koch ; Appl. Mater. Inc., USA ; Yan Ye ; D. Ma ; A. Zhao
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Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on the etch performance for features down to 0.25 μm with aspect ratios greater than 2:1. Copper etch rates of over 5000 Å/min have been achieved, and corrosion-free post copper etch performance has been demonstrated for periods in excess of two weeks. Electrical and device yield tests were conducted and presented in detail

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Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

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