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Locking characteristics of a side-mode injected semiconductor laser

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2 Author(s)
Hong, Y. ; Sch. of Electron. Eng. & Comput. Syst., Wales Univ., Bangor, UK ; Shore, K.A.

This paper is focused on an experimental study of the injection-locking bandwidth and the relaxation oscillation frequency in a side-mode injection-locked semiconductor laser. It is shown that, for such a laser, the injection-locking bandwidth and the relaxation oscillation frequency are related to the injection power and the wavelength of the target injection mode. At fixed launched injection power, the injection-locking bandwidth and relaxation oscillation frequency can be increased when the injection wavelength is detuned to the short-wavelength side of the free-running wavelength, while the relaxation oscillation frequency decreases when the injection wavelength is set to the long-wavelength side of the free-running wavelength. The results are in good agreement with theoretical predictions

Published in:

Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 11 )