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High mobility polycrystalline Si thin-film transistors (poly-Si TFTs) are firstly fabricated on flexible stainless-steel substrates 100 μm thick through low-temperature processes where both active Si and gate SiO2 films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. The gate SiO2 films are sputter-deposited in oxygen atmosphere from the SiO2 target. Resulting poly-Si TFTs show excellent characteristics of mobility of 106 cm2/V/spl middot/s and drain current on-off ratio of as high as 1×106. Thus, the poly-Si TFTs are very promising for realizing novel flat panel displays of lightweight and rugged LCDs and LEDs.