Referenced Items are not available for this document.
Millimeter-wave radiation has been generated from field effect transistors (FETs) and high electron mobility transistors (HEMTs), integrated with printed circuit antennas and illuminated with picosecond optical pulses. Modulation of the millimeter waves was achieved by applying a swept RF signal to the transistor gate. Using this technique, tunable electrical sidebands were added to the optically generated carrier providing a method of transmitting information. The technique also provides increased resolution for use in spectroscopic applications. Heterodyne detection demonstrated that the system continuously generated tunable radiation, constrained by the high-gain antenna, from 45 to 75 GHz.<
Published in:
Photonics Technology Letters, IEEE
(Volume:3
,
Issue:
3
)
Date of Publication: March 1991
- Page(s):
- 273 - 275
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 3953097
- Digital Object Identifier :
- 10.1109/68.79778
- Date of Current Version :
- 06 August 2002
- Issue Date :
- March 1991
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
