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Control of initial layer for low temperature and high deposition rate polycrystalline silicon film formation process

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4 Author(s)
Murata, K. ; Dept. of Quantum Eng., Nagoya Univ., Japan ; Ito, M. ; Hori, M. ; Goto, T.

In this study, the two step growth (TSG) method has been demonstrated to satisfy thin interface layer, the high crystallinity and high deposition rate of poly-Si film, at the same time. In the TSG, firstly the seed layer was formed without charged species, that is, with neutral species. Then, the poly-Si film was subsequently grown on the seed layer with charged species. The effects of ion bombardment on the nucleation of poly-Si films at the initial growth stage are intensively discussed.

Published in:

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Date of Conference:

6-8 July 1999