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Self-assembling of silicon quantum dots and its application to floating gate memory

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6 Author(s)
Miyazaki, S. ; Dept. of Electr. Eng., Hiroshima Univ., Japan ; Murakami, H. ; Ikeda, M. ; Yoshida, E.
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In this paper, we describe a formation mechanism of nanometer Si dots on thermally-grown SiO/sub 2/ during LPCVD using SiH/sub 4/. And also, for MOS devices with nanometer Si dots as a floating gate, we demonstrate the memory operation due to electron charging to the dots at room temperature.

Published in:
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Date of Conference: 6-8 July 1999

Page(s):
84 - 85
Meeting Date :
06 Jul 1999-08 Jul 1999
Print ISBN:
4-930813-97-2
INSPEC Accession Number:
6496121
Conference Location :
Yokohama, Japan
Digital Object Identifier :
10.1109/IMNC.1999.797488
Product Type:
Conference Publications

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