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Sub-0.10 um hole fabrication using bi-layer silylation process for 193 nm lithography

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4 Author(s)
Satou, I. ; Semicond. Leading Edge Technol. Inc., Yokohama, Japan ; Kuhara, K. ; Endo, M. ; Morimoto, H.

The silylation process is a key technology to extend the photolithography dimensions down to 0.10 um or smaller using a 193 nm or shorter wavelength. We have been evaluating a bi-layer silylation process as one approach to improve the lithographic performance of the silylation process. In this report, we describe a new biasing technique for the sub-0.10 um hole fabrication using a bi-layer silylation process.

Published in:

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Date of Conference:

6-8 July 1999