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Photoacid structure effects on environmental stability of 193-nm chemically amplified positive resists

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4 Author(s)
Yoshino, H. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Itani, T. ; Takimoto, M. ; Tanabe, H.

The effects of photoacid structure on environmental stability at post exposure bake (PEB) and during post exposure delay (PED) for 193-nm chemically amplified positive resists were investigated. It was found that the influence of airborne contamination at PEB was less than that during PED. The acidity and size of generated photoacids have a great impact on environmental stability, as well as on lithographic performance; weak acid with moderate size (/spl sim/ 100 /spl Aring//sup 3/) exhibited both high environmental stability and high resist contrast.

Published in:

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Date of Conference:

6-8 July 1999