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Lithographic performance of a chemically-amplified resist developed for synchrotron radiation lithography in the sub-100-nm region

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10 Author(s)
K. Deguchi ; NTT Telecommun. Energy Labs., Japan ; J. Nakamura ; Y. Kawai ; T. Ohno
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Chemically-amplified resists are crucial for making synchrotron radiation (SR) lithography practical for the mass production of future LSIs. It offers not only high resolution but also high sensitivity to X-rays and high etching durability in LSI fabrication processes. In this article, we evaluate the lithographic performance of a newly developed SR resist in the sub-100-nm region. It is a three-component chemically-amplified negative resist which utilizes polyhydroxystyrene partially protected by t-Boc groups as a base polymer to enhance the quality of casting and to control the dissolution rate, alicyclic-bromides with a ketonic group as a highly efficient acid generator to improve the sensitivity, and hexamethoxymethylmelamine as a cross linker. To enhance the discrimination in the dissolution rate between exposed and unexposed films, basic compounds were added.

Published in:

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Date of Conference:

6-8 July 1999