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Influence of MOSFET I-V characteristics on switching delay time of CMOS inverters after hot-carriers stress

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4 Author(s)

The relationship between hot-carrier degradation in MOSFETs and CMOS inverters is studied. It is found that the device degradation characterized as the widely used bias points correlates poorly with the inverter degradation. The use of new bias points that are more meaningful for circuit performance is proposed. A simple equation for calculating the degradation of the propagation delay is developed.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 5 )