By Topic

Two-dimensional process simulation using verified phenomenological models

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Fair, R.B. ; Microelectron. Center of North Carolina, Research Triangle Park, NC, USA ; Gardner, C.L. ; Johnson, M.J. ; Kenkel, S.W.
more authors

Two-dimensional (2-D) effects are becoming increasingly important in the diffusion of impurities in submicrometer silicon devices. The authors describe a 2-D process simulator, PREDICT2, that handles implant damage effects, annealing, and lateral diffusion. PREDICT2 simulates the diffusion of impurities in silicon by using phenomenological diffusion coefficients. The phenomenological models are verified by comparing simulated and experimental results. This approach is compared with that of point-defect-based simulators. The experimental technique for measuring impurity profiles in two dimensions is outlined. The method for generating diffusion models is illustrated by examining 2-D phosphorous diffusion. Numerical simulations and experimental measurements are compared. The numerical methods used in the simulator are described, and directions for future work are suggested

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:10 ,  Issue: 5 )