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Temperature dependence of electrical and optical modulation responses of quantum-well lasers

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4 Author(s)
Keating, T. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Jin, X. ; Chuang, S.L. ; Hess, K.

We present theory and experiment for high-speed optical injection in the absorption region of a quantum-well laser and compare the results with those of electrical injection including the carrier transport effect. We show that the main difference between the two responses is the low-frequency roll-off. By using both injection methods, we obtain more accurate and consistent measurements of many important dynamic laser parameters, including the differential gain, carrier lifetime, K factor, and gain compression factor. Temperature-dependent data of the test laser are presented which show that the most dominant effect is the linear degradation of differential gain and injection efficiency with increasing temperature. While the K-factor is insensitive to temperature variation for multiple-quantum-well lasers, we find that the carrier capture time and nonlinear gain suppression coefficient decreases as temperature increases

Published in:
Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 10 )

Date of Publication: Oct 1999

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