By Topic

Modeling of intersubband and free-carrier absorption coefficients in heavily doped conduction-band quantum-well structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kyoung-Youm Kim ; Sch. of Electr. Eng., Seoul Nat. Univ., South Korea ; Byoungho Lee ; Chanho Lee

Theoretical modelings of the transition energy for intersubband absorptions, and the intersubband and free-carrier absorption coefficients in heavily doped conduction-band anisotropic semiconductor quantum-well (QW) structures are presented. The transition matrix elements for photon absorption and emission, which are not identical due to the different many-body effects involved in the photon absorption and emission processes, are rigorously derived. We also show that the linewidth broadening effect caused by various scattering processes gives a considerable increase in resonance energy, which explains the relatively large parallel-mode transition energy which cannot be inferred from previous modeling studies. In addition, theoretical modeling of free-carrier absorption in anisotropic semiconductor QW structures is presented for the first time. The calculated results are compared with the experimental values for δ-doped Si QW's

Published in:

Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 10 )