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Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates

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4 Author(s)
Schow, C.L. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Li, R. ; Schaub, J.D. ; Campbell, J.C.

We report high-speed interdigitated (nonmetalized) p-i-n Si photodiodes fabricated on SOI substrates that operate at low bias voltages and that offer easy integration with transistor fabrication processes. Devices fabricated with a finger spacing of 2 μm and a 3.75-μm-thick active layer achieved a 1.1-GHz bandwidth at a bias of -3 V with a peak efficiency of 29% (0.2 A/W) at 850 nm. Photodiodes with the same geometry that were fabricated on a 2.71-μm-thick active layer exhibited a 3.4-GHz bandwidth and a quantum efficiency of 24% (0.16 A/W) at 840 nm when biased at -3 V. The dark current of the photodiodes was less than 25 pA at -3 V, and the capacitance of the photodiodes was less than 265 fF at an applied bias of -3 V

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Quantum Electronics, IEEE Journal of  (Volume:35 ,  Issue: 10 )