Referenced Items are not available for this document.
This paper shows that MOSFET operated in dynamic-threshold (DT) mode (V/sub body/=V/sub gate/) is more suitable for low-noise RF/analog applications than those operated in conventional mode (V/sub body/=V/sub source/). Detailed low-frequency noise properties of these two modes of device operation were compared for 0.31-/spl mu/m gate MOSFET's, in which NMOS's are surface-channel devices (S.C.) and PMOS's are buried-channel (B.C.) devices. Experimental data show that when the devices are biased at same transconductance, the low-frequency noise in DT mode is 30 times lower (at g/sub m/=2.2/spl times/10/sup -3/ S) than that in the conventional mode for the B.C. devices and ten times (at g/sub m/=2.0/spl times/10/sup -3/ S) lower for the S.C. devices.
Published in:
Electron Device Letters, IEEE
(Volume:20
,
Issue:
10
)
Date of Publication: Oct. 1999
- Page(s):
- 532 - 534
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6379242
- Digital Object Identifier :
- 10.1109/55.791933
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1999
- Sponsored by :
- IEEE Electron Devices Society
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