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p-Type SiGe transistors with low gate leakage using SiN gate dielectric

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9 Author(s)
Lu, W. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Wang, X.W. ; Hammond, R. ; Kuliev, A.
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Using high-quality jet-vapor-deposited (JVD) SiN as gate dielectric, p-type SiGe transistors are fabricated on SiGe heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD). For an 0.25-/spl mu/m gate-length device, the gate leakage current is as small as 2.4 nA/mm at V/sub ds/=-1.0 V and V/sub gn/=0.4 V. A maximum extrinsic transconductance of 167 mS/mm is measured. A unity current gain cutoff frequency of 27 GHz and a maximum oscillation frequency of 35 GHz are obtained.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 10 )

Date of Publication:

Oct. 1999

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