Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Fabrication and characterization of delta-doped In0.2Ga 0.8As-GaAs quantum wire structures grown by MOCVD using selective area epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Seong-Il Kim ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Tan, H.H. ; Jagadish, C. ; Dao, L.V.
more authors

In this work, we have fabricated delta doped quantum wire structures with sharp tips and smooth side walls. Si delta doped InGaAs/GaAs quantum wire structures were grown on SiO2 masked GaAs substrate by low pressure metalorganic chemical vapor deposition by using selective area epitaxy. The effects of the growth parameters such as growth rate, V/III ratio, growth temperature in selective epitaxy were investigated for GaAs/Al0.5Ga0.5As multilayer structures. To characterize and analyze the selectively grown structures, scanning electron microscopy and temperature dependent photoluminescence were used. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger at about 50 K. The carrier capture processes also discussed

Published in:

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Date of Conference: