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Fabrication and characterization of delta-doped In0.2Ga 0.8As-GaAs quantum wire structures grown by MOCVD using selective area epitaxy

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5 Author(s)
Seong-Il Kim ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Tan, H.H. ; Jagadish, C. ; Dao, L.V.
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In this work, we have fabricated delta doped quantum wire structures with sharp tips and smooth side walls. Si delta doped InGaAs/GaAs quantum wire structures were grown on SiO2 masked GaAs substrate by low pressure metalorganic chemical vapor deposition by using selective area epitaxy. The effects of the growth parameters such as growth rate, V/III ratio, growth temperature in selective epitaxy were investigated for GaAs/Al0.5Ga0.5As multilayer structures. To characterize and analyze the selectively grown structures, scanning electron microscopy and temperature dependent photoluminescence were used. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger at about 50 K. The carrier capture processes also discussed

Published in:

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Date of Conference:

1999

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