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A novel dual-direction IC ESD protection device

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3 Author(s)
Wang, A.Z. ; Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Tsay, C.H. ; Shan, Q.W.

We report the design of a novel dual-direction on-chip IC electrostatic discharge (ESD) protection device. The design was predicted by simulation, matched by measurements and features a high ESD-Si ratio of ~80 V/μm, deep snapback, low Ron of 0.64 Ω, low leakage (~pA), adjustable triggering voltage, and good scalability

Published in:

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

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