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A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

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6 Author(s)
Hao Guan ; Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore ; Jin Cho, Byung ; Li, M.-F. ; He, Y.D.
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The quasi-breakdown (QB) mechanism of ultrathin gate oxide (35 Å) under high field stress was investigated using the DCIV technique. It was found that under various stress conditions, the charge to QB is exponentially dependent on the stressing gate voltage, while the interface state densities always reach the same value at the QB onset point. Thus, we conclude that quasi-breakdown in ultra-thin oxides is triggered by a critical interface states density

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Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

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