Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yen-Ann Chen ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Ming-Lung Hsu ; Li-Hong Laih ; Jyh-Wong Hong
more authors

A conventional plasma-enhanced chemical vapour deposition (PECVD) system with a stainless steel mesh attached to a cathode was used to fabricate an SiC-based thin-film light-emitting diode (TFLED) at a low temperature (~180°C). The obtained TFLED had a brightness (B) of 1060 cd/m2 at an injection current density (J) of 600 mA/cm 2 and a threshold voltage (Vth) of 12.6 V, which were much better than those of 330 cd/m2 and 18.5 V for an amorphous SiC-based TFLED fabricated by the same PECVD system without a stainless steel mesh

Published in:

Electronics Letters  (Volume:35 ,  Issue: 15 )