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1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition

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2 Author(s)
S. Sato ; Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan ; S. Satoh

1.3 μm continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has been demonstrated. The threshold current and threshold current density of the 700 μm long laser at 20°C were 63 mA and 1.2 kA/cm2, respectively. These are the lowest values ever reported for 1.3 μm GaInNAs/GaAs lasers under continuous wave operation. Characteristic temperatures as high as 128 K were observed under continuous-wave operation

Published in:

Electronics Letters  (Volume:35 ,  Issue: 15 )