Referenced Items are not available for this document.
We have investigated the influence of AlAs buffer layers on MESFET drain leakage current at temperatures from 25-350/spl deg/C. The experimental results show that subthreshold drain leakage current is substantially decreased with increasing AlAs layer thickness. For a 1 /spl mu/m/spl times/200 /spl mu/m MESFET with 2500 /spl Aring/ of AlAs buffer layer, we have obtained 78 /spl mu/A of subthreshold drain leakage current at 350/spl deg/C ambient temperature. This leakage current value is a factor of 2.5 improvement over the best previously reported results at 350/spl deg/C.
Published in:
Electron Device Letters, IEEE
(Volume:16
,
Issue:
6
)
Date of Publication: June 1995
- Page(s):
- 265 - 267
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5007168
- Digital Object Identifier :
- 10.1109/55.790730
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- June 1995
- Sponsored by :
- IEEE Electron Devices Society
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