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High temperature characteristics of GaAs MESFET devices fabricated with AlAs buffer layer

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7 Author(s)
R. Lee ; Res. Div., Solid State Electron. Directorate, US Air Force Wright Lab., Dayton, OH, USA ; G. Trombley ; B. Johnson ; R. Reston
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We have investigated the influence of AlAs buffer layers on MESFET drain leakage current at temperatures from 25-350/spl deg/C. The experimental results show that subthreshold drain leakage current is substantially decreased with increasing AlAs layer thickness. For a 1 μm×200 μm MESFET with 2500 /spl Aring/ of AlAs buffer layer, we have obtained 78 μA of subthreshold drain leakage current at 350/spl deg/C ambient temperature. This leakage current value is a factor of 2.5 improvement over the best previously reported results at 350/spl deg/C.

Published in:

IEEE Electron Device Letters  (Volume:16 ,  Issue: 6 )