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A new device concept, called the dual gate base resistance controlled thyristor (DG-BRT), is introduced for simultaneously obtaining the low on-state voltage drop of a thyristor together with a good forward biased safe operating area. The two gates are used to control an N-channel and a P-channel MOSFET integrated with a thyristor structure using the DMOS process. When a positive bias is applied to both gates, the device operates in the thyristor-mode with a low on-state voltage drop at even high current densities. When a negative bias is applied to the OFF-gate, the device operates in the IGBT-mode with the saturated current controlled by the positive bias applied to the ON-gate. The results of two-dimensional numerical simulations and measurements performed on devices with 600 V forward blocking capability are reported.