By Topic

Surface degradation mechanism of InP/InGaAs APDs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sudo, H. ; Optoelectron Lab., NTT, Kanagawa, Japan ; Suzuki, M.

Bias-temperature tests of InP/InGaAs avalanche photodiodes have been conducted to evaluate long-term reliability at temperatures from 200-250° C. Wearout -failure modes with a gradual increase in dark current occur at all testing levels. Failure analyses using the light-beam-induced current method suggest that the degradation is caused by local avalanche multiplication in the guard-ring periphery. A surface degradation mechanism is proposed, namely, positive charge accumulation in the passivation film above the guard-ring region, followed by local avalanche multiplication at the guard-ring periphery. A tentative activation energy of 1.7 eV is obtained for this failure mode, and the extrapolated median life exceeds 1010 h in practical use

Published in:

Lightwave Technology, Journal of  (Volume:6 ,  Issue: 10 )