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Electrical characterization of oxide and Si/SiO2 interface of irradiated NMOS transistors at low radiation doses

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4 Author(s)
Djezzar, B. ; Lab. of Microelectron., Centre de Dev. des Technol. Avancees, Algiers, Algeria ; Amrouche, A. ; Smatti, A. ; Kachouane, M.

N-channel MOSFET's of different dimensions were first irradiated with 60Co gamma rays source at several low radiation total doses. Then their SiO2 gate oxides and Si/SiO2 interfaces were characterized by using the standard charge pumping (CP) and the extended standard CP to low frequencies techniques. Both techniques reveal two radiation-induced oxide charge traps formation mechanisms, caused by low radiation total doses. Initially, there is a build-up of positive charge in the oxide layer, followed later by a diminution of net positive charge (turn around effect) due to generation of negative charge or/and transformation of positive oxide traps to interface traps. The interface traps exhibit a linear increase with radiation doses

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Nuclear Science, IEEE Transactions on  (Volume:46 ,  Issue: 4 )