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Industrial transfer and stabilization of a CMOS-JFET-bipolar radiation-hard analog-digital SOI technology

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28 Author(s)
Dentan, M. ; CEA, Centre d''Etudes Nucleaires de Saclay, Gif-sur-Yvette, France ; Abbon, P. ; Borgeaud, P. ; Delagnes, E.
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DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >1014 neutron/cm2) vertical bipolar, 0.8 μm CMOS and 1.2 μm PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL program goal, we discuss in more detail the main technological choices, the main milestones from the R&D to the industrial implementation, and the main results obtained after stabilization of the final process-flow in the MHS foundry

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Nuclear Science, IEEE Transactions on  (Volume:46 ,  Issue: 4 )