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Trap effects studies in GaN MESFETs by pulsed measurements

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7 Author(s)
Trassaert, S. ; USTL, IEMN, Villeneuve d''Ascq, France ; Boudart, B. ; Gaquiere, C. ; Theron, D.
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Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface states has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3 GHz have shown that the maximum stable gain increases with temperature

Published in:

Electronics Letters  (Volume:35 ,  Issue: 16 )

Date of Publication:

5 Aug 1999

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