Cart (Loading....) | Create Account
Close category search window
 

Trap effects studies in GaN MESFETs by pulsed measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Trassaert, S. ; USTL, IEMN, Villeneuve d''Ascq, France ; Boudart, B. ; Gaquiere, C. ; Theron, D.
more authors

Static and pulsed measurements have been performed on GaN MESFETs. The existence of electrical traps associated with the surface states has been demonstrated. These traps can be activated by light or temperature. Hyper-frequency pulsed measurements performed at 3 GHz have shown that the maximum stable gain increases with temperature

Published in:

Electronics Letters  (Volume:35 ,  Issue: 16 )

Date of Publication:

5 Aug 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.