By Topic

Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
C. P. Hains ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; N. Y. Li ; K. Yang ; X. D. Huang
more authors

The lasing operation of three-quantum-well GaInNAs stripe geometry lasers grown by MOCVD on 0/spl deg/ and 6/spl deg/ misoriented [100] GaAs substrates, respectively, have been demonstrated and their performance is compared for the first time. Both devices achieved room temperature, pulsed lasing operation at an emission wavelength of 1.17 μm, with a threshold current density of 667 A/cm2 for lasers grown on 6/spl deg/ misoriented substrates, and 1 kA/cm2 for lasers grown on 0/spl deg/ misoriented substrates. The threshold for the lasers grown on 6/spl deg/ misoriented substrates compares favorably with the best results for GaInNAs lasers. Lasers with narrower stripe width and a planar geometry have also been demonstrated by the use of lateral selective wet oxidation for current confinement, with a threshold current density of 800 A/cm2 for 25-μm-wide devices.

Published in:

IEEE Photonics Technology Letters  (Volume:11 ,  Issue: 10 )