By Topic

1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Mukai, K. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Nakata, Y. ; Otsubo, K. ; Sugawara, M.
more authors

We demonstrate the first 1.3-μm continuous-wave (CW) lasing at room temperature of self-assembled InGaAs-GaAs quantum dots. High-density 1.3-μm emission dots were successfully formed by the combination of low-rate growth and InGaAs-layer overgrowth methods of molecular beam epitaxy. The 1.3-μm ground-level CW lasing occurred at up to 40/spl deg/C, and the threshold current of 8 mA at 25/spl deg/C is less than one thirtieth of values ever reported for 1.3-μm dot pulse lasers. The achievement represents a milestone for creating quantum-dot lasers applicable to fiber-optic communication system.

Published in:

Photonics Technology Letters, IEEE  (Volume:11 ,  Issue: 10 )