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40 Gbit/s decision IC using InP/InGaAs composite-collector heterojunction bipolar transistors

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4 Author(s)
Sano, E. ; NTT Network Innovation Labs., Kanagawa, Japan ; Nakajima, H. ; Watanabe, N. ; Yamahata, S.

40 Gbit/s error-free operation with a phase margin of 216° has been obtained from a decision IC fabricated using reliable InP/InGaAs composite-collector heterojunction bipolar transistors (CC-HBTs) with a unity current gain cutoff frequency of 116 GHz and a maximum oscillation frequency of 169 GHz. This is the first demonstration of all bipolar transistor decision ICs at such a high bit rate

Published in:

Electronics Letters  (Volume:35 ,  Issue: 14 )