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Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

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5 Author(s)
Liu, G.T. ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; Stintz, A. ; Li, H. ; Malloy, K.J.
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The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 μm

Published in:

Electronics Letters  (Volume:35 ,  Issue: 14 )

Date of Publication:

8 Jul 1999

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