By Topic

Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Liu, G.T. ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; Stintz, A. ; Li, H. ; Malloy, K.J.
more authors

The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 μm

Published in:

Electronics Letters  (Volume:35 ,  Issue: 14 )