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3.5 W CW operation of quantum dot laser

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11 Author(s)
A. R. Kovsh ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; A. E. Zhukov ; D. A. Livshits ; A. Y. Egorov
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AlGaAs-GaAs diode lasers with the active region based on a dense array of self-organised InAlAs-InAs quantum dots have been fabricated with 3.5 W output power for both facets with a peak conversion efficiency of 45% in a 100 μm-wide stripe with uncoated facets were obtained

Published in:

Electronics Letters  (Volume:35 ,  Issue: 14 )