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Browse Journals & Magazines > Electronics Letters ...> Volume:35 Issue:14 Help

3.5 W CW operation of quantum dot laser

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11 Author(s)
Kovsh, A.R. ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; Zhukov, A.E. ; Livshits, D.A. ; Egorov, A.Yu.
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AlGaAs-GaAs diode lasers with the active region based on a dense array of self-organised InAlAs-InAs quantum dots have been fabricated with 3.5 W output power for both facets with a peak conversion efficiency of 45% in a 100 μm-wide stripe with uncoated facets were obtained

Published in:
Electronics Letters  (Volume:35 ,  Issue: 14 )

Date of Publication: 8 Jul 1999

Page(s):
1161 - 1163
ISSN :
0013-5194
INSPEC Accession Number:
6321450
Digital Object Identifier :
10.1049/el:19990813
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
8 Jul 1999
Sponsored by :
Institution of Engineering and Technology

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