By Topic

High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hiramoto, K. ; Central Res. Labs., Hitachi Ltd., Tokyo, Japan ; Sagawa, M. ; Kikawa, Takeshi ; Tsuji, S.

We have fabricated Al-free InGaAs-InGaAsP-GaAs strained quantum-well 0.98-μm lasers with a window structure. The window structure was obtained by Si ion-implantation-induced QW intermixing. The photoluminescence and photocurrent measurements show that an implantation energy of 100 keV and a dose of 1E13 cm-2 are enough for the fabrication of the window structure in our laser structure. The threshold current of the fabricated 0.98-μm lasers with a window structure is 20 mA and a stable lateral mode is obtained up to 300 mW, and these results suggest that there is no scattering loss or absorption due to the introduction of a window structure. The reliability of the lasers is greatly improved by the introduction of the window structure: they exhibited stable operation for more than 1000 h at 240-mW output power at 50°C. And this results gives us an estimated lifetime of more than 200 000 h at 25°C

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )