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High-temperature operation (70°C, 50 mW) of 660-nm-band InGaAlP Zn-diffused window lasers fabricated using highly Zn-doped GaAs layers

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10 Author(s)
Watanabe, M. ; Semicond. Group, Toshiba Corp., Kawasaki, Japan ; Shiozawa, H. ; Horiuchi, O. ; Itoh, Y.
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660-nm-band InGaAlP Zn-diffused window structure lasers have been fabricated using highly Zn-doped GaAs layers grown by metal-organic chemical vapor deposition as a Zn diffusion source. A multiquantum-well active region was disordered by Zn diffusion, resulting in band-gap expansion and photoluminescence-wavelength shortening. In this Zn diffusion method, the Zn diffusion length from the active region into the n-cladding layer and the PL-wavelength shortening were easily controlled by controlling the Zn-dopant amount and the Zn-doped GaAs layer thickness. This method is very suitable for mass production. Window lasers fabricated by this method operate at up to 188 mW at 25°C, and as high as 50 mW at 85°C, and 30 mW at 95°C with no COD. The lasers have been operating stably for more than 1200 h at 70°C temperature and 50-mW output power. The mean time to failure was predicted as being more than 37000 h

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )