By Topic

40-mW 100°C maximum temperature operation of 655-nm band InGaP-InGaAlP strained multiple-quantum-well laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Shimada, Naohiro ; Semicond. Group, Toshiba Corp., Kawasaki, Japan ; Horiuchi, O. ; Gen-ei, K. ; Tanaka, A.
more authors

High-power and high-temperature operation of 40 mW at 100°C has been realized in 655-nm band multiple-quantum-well (MQW) laser diodes. Both low threshold current density and low optical power density have been achieved by optimizing InGaP-InGaAlP strained MQW separate-confinement heterostructure, high doping for acceptors in p-cladding layer and adopting low-optical-loss high-reflectivity-coating at the rear facet. Fundamental-transverse-mode operation, up to 70 mW, was obtained. High-frequency and large-intensity modulation characteristics above 1 GHz were demonstrated. The relative intensity noise values were as low as -135 dB/Hz under an optical feedback with high-frequency modulation. Stable operation of 30 mW at 70°C over 1000 h was accomplished

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )