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Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

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10 Author(s)
Joullie, A. ; Centre d''Electron. et de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Glastre, G. ; Blondeau, R. ; Nicolas, J.C.
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Ridge-waveguide laser diodes emitting near 2.38 μm have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained for the first time from a type-II QW laser. At 23°C threshold currents in the range 60-140 mA and CW output powers exceeding 1 mW/facet were obtained. These lasers showed a tendency to operate in a single longitudinal mode with a temperature red shift of 0.1 nm/°C and a current red shift of 0.06 nm/mA

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )

Date of Publication:

May/Jun 1999

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