By Topic

Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Joullie, A. ; Centre d''Electron. et de Microoptoelectron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Glastre, G. ; Blondeau, R. ; Nicolas, J.C.
more authors

Ridge-waveguide laser diodes emitting near 2.38 μm have been fabricated from GaInAsSb-GaSb type-II quantum-well (QW) structures grown by molecular beam epitaxy. These devices operated continuous-wave (CW) at room temperature, what is obtained for the first time from a type-II QW laser. At 23°C threshold currents in the range 60-140 mA and CW output powers exceeding 1 mW/facet were obtained. These lasers showed a tendency to operate in a single longitudinal mode with a temperature red shift of 0.1 nm/°C and a current red shift of 0.06 nm/mA

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )