By Topic

Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
S. Oku ; NTT Opto-Electron. Labs., Kanagawa, Japan ; T. Ishii ; R. Iga ; T. Hirono

Distributed Bragg reflector (DBR) lasers and distributed feedback (DFB) lasers utilizing diffraction grating formed by deeply etched periodic grooves were fabricated on an InGaAs-GaAs-strained quantum-well active wafer without using a regrowth process. The first-order grooved grating that had a 150-nm period and 800-nm depth was etched from the top surface into the cladding layer on the wafer using electron beam lithography and a reactive beam etching with a mixture of Br2 and N2 gas. The dependence of optical properties on the structure of the grooved grating is discussed in terms of an evaluation of the coupling coefficient. The fabricated DBR and DFB lasers exhibit single-longitudinal mode oscillation with output powers of 20 mW (DBR) and 10 mW (DFB) in the measured temperature range between 15°C-55°C. The characteristic temperature T0 for the threshold current is about 120 K. The slope efficiency is held constant in the measured temperature range. The performance of these DBR and DFB lasers demonstrates that the use of the grooved grating provides wavelength-stabilized lasers with a simple fabrication process

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:5 ,  Issue: 3 )