By Topic

Semiconductor lasers with one- and two-dimensional air/semiconductor gratings embedded by wafer fusion technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
M. Imada ; Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan ; S. Noda ; A. Chutinan ; M. Murata
more authors

This paper describes the use of wafer fusion technique between submicrometer-order patterned wafers to realize novel optoelectronic devices. First, to demonstrate the feasibility of applying the technique to optoelectronic devices, we demonstrate a continuous wave oscillation of a one-dimensional distributed feedback laser with air/semiconductor gratings embedded by the wafer fusion technique. Next, we fabricate a device with two-dimensional triangular-lattice structure and obtain a very unique hexagonal symmetric surface-emitting pattern. From the calculated photonic band diagram of the device, the surface-emitting pattern is considered to reflect the photonic band nature of triangular-lattice structure. The room temperature lasing oscillation of the device with two-dimensional triangular-lattice structure is also achieved. These results indicate that the air/semiconductor gratings formed by wafer fusion technique can be applied to develop various optoelectronic devices, and the realization of novel devices is expected

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:5 ,  Issue: 3 )