By Topic

Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
D. Bhattacharyya ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; E. A. Avrutin ; A. C. Bryce ; J. H. Marsh
more authors

The spectral and dynamic properties of InAs-GaAs MOCVD-grown vertically stacked self-organized quantum-dot lasers are studied experimentally. A strong mode grouping effect (quasi-periodic modulation of the lasing spectrum) is observed and interpreted as a result of wavelength-dependent losses in the laser waveguide associated with substrate leakage and reflection. Some samples also display a broader spectral modulation which may be attributed to lasing from different groups of dots, or energy levels. Experimental observations are in agreement with a theoretical explanation involving increased optical nonlinearities due to the localized nature of carriers. In relaxation oscillation pulse trains, a substructure is observed which we believe to be a dynamic manifestation of the same carrier localization effects; a preliminary rate-equation simulation supports this interpretation.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:5 ,  Issue: 3 )