By Topic

Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
T. C. Newell ; Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA ; M. W. Wright ; H. Hou ; L. F. Lester

Novel quantum-well lasers with a 100-Å GaAs quantum-well (QW) (λ~840 nm) and a higher energy 40-Å AlGaInAs QW (λ~810 nm) in a graded AlxGa1-xAs separate confinement heterostructure (SCH) with the bandgap increasing from the p- to the n-side are characterized. A sizeable variation in the QW carrier densities can be achieved as a function of well composition and placement due to the built-in electric field that forces carriers toward the p-side of the SCH and the different densities of states and carrier capture rates of the QW's. Transversely emitted spontaneous emission (SE) is measured through a windowed contact to determine the relative contribution from each QW to the total SE. Information from these measurements is incorporated into a detailed device model to determine the carrier density and evaluate the gain characteristics in a new way. Since the nonidentical wells emit different photon energies, it is shown for the first time that the carrier density can be determined at a specific location within the SCH of a semiconductor laser. By changing the placement of dissimilar QW's and the grading of the SCH, it is found that the gain spectrum can be substantially engineered

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:5 ,  Issue: 3 )