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Densely arrayed eight-wavelength semiconductor lasers fabricated by microarray selective epitaxy

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4 Author(s)
K. Kudo ; Opto-Electron. & High Frequency Res. Labs., NEC Corp., Ibaraki, Japan ; Y. Furushima ; T. Nakazaki ; M. Yamaguchi

This paper describes a novel epitaxial growth technique, called microarray selective epitaxy (MASE), for fabricating extremely small integrated photonic devices. The MASE technique makes it possible to form densely arrayed (pitch <10 μm) multiple-quantum-well (MQW) waveguides without semiconductor etching as well as to control the bandgap energy of each waveguide. The technique is demonstrated for fabricating an eight-channel 10-μm-spacing microarray MQW structure, and the bandgap wavelength of each channel is successfully controlled by changing the SiO2 mask pattern over a range of 90 nm. The technique is also applied to the fabrication of densely arrayed, eight-wavelength, Fabry-Perot laser diodes. The laser section is only 70 pm wide and 400 μm long. Eight different lasing wavelengths (each over 80 nm), a uniform threshold current of less than 9 mA, and an output power of over 10 mW are obtained

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:5 ,  Issue: 3 )