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Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

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5 Author(s)
Wada, H. ; Opto-Electron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Takemasa, K. ; Munakata, T. ; Kobayashi, M.
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Effects of well number on temperature characteristics have been investigated in 1.3-μm AlGaInAs-InP compressively strained multiple-quantum-well lasers. Well-number dependence of threshold currents (Ith), external quantum efficiencies (ηd ), characteristic temperatures of Ith and ηd arid maximum operation temperatures have been experimentally determined and analyzed. The characteristic temperature of the threshold current (T0) and the maximum operation temperature (Tmax ) were found to increase with increasing the number of quantum wells and a record high pulsed Tmax of 220°C has been achieved in lasers with ten wells. In contrast, the characteristic temperature of the external efficiency (Tη) was found to decrease with increasing the number of wells. Because of this opposite well-number dependence of the T0 and Tη, each of them alone is not necessarily a good measure to optimize the number of wells. Therefore, in this work, me also evaluated a power reduction at a constant current with increasing temperature, which depends on both T0 and Tη and thus should be a more practical measure of the temperature characteristics, and discuss the optimum number of the quantum wells

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )