Cart (Loading....) | Create Account
Close category search window
 

Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wada, H. ; Opto-Electron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Takemasa, K. ; Munakata, T. ; Kobayashi, M.
more authors

Effects of well number on temperature characteristics have been investigated in 1.3-μm AlGaInAs-InP compressively strained multiple-quantum-well lasers. Well-number dependence of threshold currents (Ith), external quantum efficiencies (ηd ), characteristic temperatures of Ith and ηd arid maximum operation temperatures have been experimentally determined and analyzed. The characteristic temperature of the threshold current (T0) and the maximum operation temperature (Tmax ) were found to increase with increasing the number of quantum wells and a record high pulsed Tmax of 220°C has been achieved in lasers with ten wells. In contrast, the characteristic temperature of the external efficiency (Tη) was found to decrease with increasing the number of wells. Because of this opposite well-number dependence of the T0 and Tη, each of them alone is not necessarily a good measure to optimize the number of wells. Therefore, in this work, me also evaluated a power reduction at a constant current with increasing temperature, which depends on both T0 and Tη and thus should be a more practical measure of the temperature characteristics, and discuss the optimum number of the quantum wells

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )

Date of Publication:

May/Jun 1999

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.