By Topic

GaAs MESFET with low current capability grafted onto quartz substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ho, C.-L. ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Wu, M.-C. ; Ho, W.-J. ; Liaw, J.-W.

DC characteristics of a GaAs MESFET, which is grafted onto an optically flat quartz substrate, are presented and discussed. The authors utilised a GaAs MESFET having small current capability in order to avoid heat effects and to magnify the effects brought by transplantation. Improved pinch-off and saturation behaviours, as well as increased drain-gate breakdown voltage, stemming from the insulating property of the quartz substrate were observed. Negative shift of threshold voltage and degraded low-field mobility were also observed and both were attributed to the stresses acting on the active region

Published in:

Circuits, Devices and Systems, IEE Proceedings -  (Volume:146 ,  Issue: 3 )