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Large signal frequency dispersion of AlGaN/GaN heterostructure field effect transistors

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5 Author(s)
E. Kohn ; Dept. of Electron. Devices & Circuits, Ulm Univ. ; I. Daumiller ; P. Schmid ; N. X. Nguyen
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Microwave AlGaN/GaN MODFET power devices have been analysed with respect to their frequency dispersion in terms of transconductance, gate capacitance and large signal output current swing. A electrical equivalent circuit model consistent with all experimental findings, based on the incorporation of a lossy dielectric layer, is presented. It may also enable an interpretation to be made of the RF power compression observed in these devices

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Electronics Letters  (Volume:35 ,  Issue: 12 )