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Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content

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10 Author(s)
Tsujimura, A. ; Central Res. Lab., Matsushita Commun. Ind. Co. Ltd., Osaka, Japan ; Hasegawa, Y. ; Ishibashi, A. ; Kamiyama, S.
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Based on the indium content dependence of optical gain in a GaInN multiquantum well (MQW) structure, room-temperature continuous-wave operation of GaInN MQW laser diodes is demonstrated. Amplified spontaneous emission spectra for Ga1-xInyN (x=0.07 0.11) MQWs suggest that lower indium content leads to smaller bandgap inhomogeneity and an improvement in the laser performance. Ga0.93 In0.07N MQW laser diodes were operated with a threshold current density of 11 kAcm2

Published in:

Electronics Letters  (Volume:35 ,  Issue: 12 )