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Process integration of a direct-on-metal, non-etchback, κ=2.5 spin-on polymer for the 0.18 μm CMOS technology node

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10 Author(s)
Sum, J.C. ; Lab. of ULSI Res., Hewlett-Packard Co., Palo Alto, CA, USA ; Ray, G.W. ; Ma, S. ; Kavari, R.
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Process integration of a κ=2.5 spin-on dielectric polymer into double-level metal CMOS parametric test structures at two technology nodes (0.35 μm and 0.18 μm) is described. This was accomplished using a single-coat, DOM (direct-on-metal), NEB (nonetchback) process. The structures are globally planarized using a standard CMP process on an oxide-based layer used to cap the low-k spin-on dielectric. Details of the process are presented together with electrical data demonstrating very low capacitance and low leakage current, even after multiple thermal cycles

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Interconnect Technology, 1999. IEEE International Conference

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